Band-gap engineering in CIGS solar cells using Nelder-Mead simplex optimization algorithm
Identifieur interne : 009046 ( Main/Repository ); précédent : 009045; suivant : 009047Band-gap engineering in CIGS solar cells using Nelder-Mead simplex optimization algorithm
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Abstract
Band-gap grading in a CIGS absorber and a conduction band offset at n/p hetero-interface are two important parameters of band-gap engineering aiming at high efficient CIGS solar cells. To obtain optimal CIGS absorber's band-gap grading profile an automatic optimization loop based on Nelder-Mead simplex optimization algorithm has been implemented. The optimization problem is described with an objective function, which-by varying the input parameters-is minimized or maximized. In our study two types of objective functions are used; optical and electrical. As the most optimal profile a parabolic, double graded band-gap profile with a positive or nearly zero conduction band offset at n/p hetero-interface is calculated. Structures with different CIGS absorber thicknesses and bulk and/or hetero-interface recombination lifetimes are examined and their optimized parameters are discussed in the light of experimental achievements.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Band-gap engineering in CIGS solar cells using Nelder-Mead simplex optimization algorithm</title><author><name sortKey="Cemivec, G" uniqKey="Cemivec G">G. Cemivec</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Faculty of Electrical Engineering, University of Ljubljana, Trzaska 25</s1><s2>1000 Ljubljana</s2><s3>SVN</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country>Slovénie</country><wicri:noRegion>1000 Ljubljana</wicri:noRegion></affiliation></author><author><name sortKey="Krc, J" uniqKey="Krc J">J. Krc</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Faculty of Electrical Engineering, University of Ljubljana, Trzaska 25</s1><s2>1000 Ljubljana</s2><s3>SVN</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country>Slovénie</country><wicri:noRegion>1000 Ljubljana</wicri:noRegion></affiliation></author><author><name sortKey="Smole, F" uniqKey="Smole F">F. Smole</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Faculty of Electrical Engineering, University of Ljubljana, Trzaska 25</s1><s2>1000 Ljubljana</s2><s3>SVN</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country>Slovénie</country><wicri:noRegion>1000 Ljubljana</wicri:noRegion></affiliation></author><author><name sortKey="Topic, M" uniqKey="Topic M">M. Topic</name><affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Faculty of Electrical Engineering, University of Ljubljana, Trzaska 25</s1><s2>1000 Ljubljana</s2><s3>SVN</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></inist:fA14><country>Slovénie</country><wicri:noRegion>1000 Ljubljana</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">07-0042709</idno><date when="2006">2006</date><idno type="stanalyst">PASCAL 07-0042709 INIST</idno><idno type="RBID">Pascal:07-0042709</idno><idno type="wicri:Area/Main/Corpus">008358</idno><idno type="wicri:Area/Main/Repository">009046</idno></publicationStmt><seriesStmt><idno type="ISSN">0040-6090</idno><title level="j" type="abbreviated">Thin solid films</title><title level="j" type="main">Thin solid films</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Algorithm</term><term>Band offset</term><term>Conduction band</term><term>Copper selenides</term><term>Gallium selenides</term><term>Indium selenides</term><term>Interface</term><term>Lifetime</term><term>Optimization</term><term>Size effect</term><term>Solar cell</term><term>Theoretical study</term><term>Thin film</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>Cellule solaire</term><term>Optimisation</term><term>Algorithme</term><term>Bande conduction</term><term>Discontinuité bande</term><term>Interface</term><term>Effet dimensionnel</term><term>Durée vie</term><term>Etude théorique</term><term>Couche mince</term><term>Cuivre séléniure</term><term>Indium séléniure</term><term>Gallium séléniure</term><term>8460J</term><term>Cu(In1-xGax)Se2</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">Band-gap grading in a CIGS absorber and a conduction band offset at n/p hetero-interface are two important parameters of band-gap engineering aiming at high efficient CIGS solar cells. To obtain optimal CIGS absorber's band-gap grading profile an automatic optimization loop based on Nelder-Mead simplex optimization algorithm has been implemented. The optimization problem is described with an objective function, which-by varying the input parameters-is minimized or maximized. In our study two types of objective functions are used; optical and electrical. As the most optimal profile a parabolic, double graded band-gap profile with a positive or nearly zero conduction band offset at n/p hetero-interface is calculated. Structures with different CIGS absorber thicknesses and bulk and/or hetero-interface recombination lifetimes are examined and their optimized parameters are discussed in the light of experimental achievements.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0040-6090</s0></fA01><fA02 i1="01"><s0>THSFAP</s0></fA02><fA03 i2="1"><s0>Thin solid films</s0></fA03><fA05><s2>511-12</s2></fA05><fA08 i1="01" i2="1" l="ENG"><s1>Band-gap engineering in CIGS solar cells using Nelder-Mead simplex optimization algorithm</s1></fA08><fA09 i1="01" i2="1" l="ENG"><s1>Proceedings of Symposium F on Thin Film and Nanostructured Materials for Photovoltaics, EMRS 2005 Conference, Strasbourg, France, May 31-June 3, 2005</s1></fA09><fA11 i1="01" i2="1"><s1>CEMIVEC (G.)</s1></fA11><fA11 i1="02" i2="1"><s1>KRC (J.)</s1></fA11><fA11 i1="03" i2="1"><s1>SMOLE (F.)</s1></fA11><fA11 i1="04" i2="1"><s1>TOPIC (M.)</s1></fA11><fA12 i1="01" i2="1"><s1>SLAOUI (A.)</s1><s9>ed.</s9></fA12><fA12 i1="02" i2="1"><s1>JÄGER-WALDAU (A.)</s1><s9>ed.</s9></fA12><fA12 i1="03" i2="1"><s1>POORTSMANS (J.)</s1><s9>ed.</s9></fA12><fA12 i1="04" i2="1"><s1>BRABEC (C.)</s1><s9>ed.</s9></fA12><fA14 i1="01"><s1>Faculty of Electrical Engineering, University of Ljubljana, Trzaska 25</s1><s2>1000 Ljubljana</s2><s3>SVN</s3><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ><sZ>4 aut.</sZ></fA14><fA15 i1="01"><s1>InESS (Institut d'Electronique du Solide et des Systèmes) - CNRS, 23 rue du Loess</s1><s2>67037 Strasbourg</s2><s3>FRA</s3></fA15><fA18 i1="01" i2="1"><s1>European Materials Resarch Society</s1><s2>Strasbourg</s2><s3>FRA</s3><s9>org-cong.</s9></fA18><fA20><s1>60-65</s1></fA20><fA21><s1>2006</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>13597</s2><s5>354000115536260110</s5></fA43><fA44><s0>0000</s0><s1>© 2007 INIST-CNRS. All rights reserved.</s1></fA44><fA45><s0>19 ref.</s0></fA45><fA47 i1="01" i2="1"><s0>07-0042709</s0></fA47><fA60><s1>P</s1><s2>C</s2></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Thin solid films</s0></fA64><fA66 i1="01"><s0>CHE</s0></fA66><fC01 i1="01" l="ENG"><s0>Band-gap grading in a CIGS absorber and a conduction band offset at n/p hetero-interface are two important parameters of band-gap engineering aiming at high efficient CIGS solar cells. To obtain optimal CIGS absorber's band-gap grading profile an automatic optimization loop based on Nelder-Mead simplex optimization algorithm has been implemented. The optimization problem is described with an objective function, which-by varying the input parameters-is minimized or maximized. In our study two types of objective functions are used; optical and electrical. As the most optimal profile a parabolic, double graded band-gap profile with a positive or nearly zero conduction band offset at n/p hetero-interface is calculated. Structures with different CIGS absorber thicknesses and bulk and/or hetero-interface recombination lifetimes are examined and their optimized parameters are discussed in the light of experimental achievements.</s0></fC01><fC02 i1="01" i2="X"><s0>001D06C02D1</s0></fC02><fC02 i1="02" i2="X"><s0>230</s0></fC02><fC03 i1="01" i2="X" l="FRE"><s0>Cellule solaire</s0><s5>01</s5></fC03><fC03 i1="01" i2="X" l="ENG"><s0>Solar cell</s0><s5>01</s5></fC03><fC03 i1="01" i2="X" l="SPA"><s0>Célula solar</s0><s5>01</s5></fC03><fC03 i1="02" i2="X" l="FRE"><s0>Optimisation</s0><s5>02</s5></fC03><fC03 i1="02" i2="X" l="ENG"><s0>Optimization</s0><s5>02</s5></fC03><fC03 i1="02" i2="X" l="SPA"><s0>Optimización</s0><s5>02</s5></fC03><fC03 i1="03" i2="X" l="FRE"><s0>Algorithme</s0><s5>03</s5></fC03><fC03 i1="03" i2="X" l="ENG"><s0>Algorithm</s0><s5>03</s5></fC03><fC03 i1="03" i2="X" l="SPA"><s0>Algoritmo</s0><s5>03</s5></fC03><fC03 i1="04" i2="X" l="FRE"><s0>Bande conduction</s0><s5>04</s5></fC03><fC03 i1="04" i2="X" l="ENG"><s0>Conduction band</s0><s5>04</s5></fC03><fC03 i1="04" i2="X" l="SPA"><s0>Banda conducción</s0><s5>04</s5></fC03><fC03 i1="05" i2="X" l="FRE"><s0>Discontinuité bande</s0><s5>05</s5></fC03><fC03 i1="05" i2="X" l="ENG"><s0>Band offset</s0><s5>05</s5></fC03><fC03 i1="05" i2="X" l="SPA"><s0>Discontinuidad banda</s0><s5>05</s5></fC03><fC03 i1="06" i2="X" l="FRE"><s0>Interface</s0><s5>06</s5></fC03><fC03 i1="06" i2="X" l="ENG"><s0>Interface</s0><s5>06</s5></fC03><fC03 i1="06" i2="X" l="SPA"><s0>Interfase</s0><s5>06</s5></fC03><fC03 i1="07" i2="X" l="FRE"><s0>Effet dimensionnel</s0><s5>07</s5></fC03><fC03 i1="07" i2="X" l="ENG"><s0>Size effect</s0><s5>07</s5></fC03><fC03 i1="07" i2="X" l="SPA"><s0>Efecto dimensional</s0><s5>07</s5></fC03><fC03 i1="08" i2="X" l="FRE"><s0>Durée vie</s0><s5>08</s5></fC03><fC03 i1="08" i2="X" l="ENG"><s0>Lifetime</s0><s5>08</s5></fC03><fC03 i1="08" i2="X" l="SPA"><s0>Tiempo vida</s0><s5>08</s5></fC03><fC03 i1="09" i2="X" l="FRE"><s0>Etude théorique</s0><s5>09</s5></fC03><fC03 i1="09" i2="X" l="ENG"><s0>Theoretical study</s0><s5>09</s5></fC03><fC03 i1="09" i2="X" l="SPA"><s0>Estudio teórico</s0><s5>09</s5></fC03><fC03 i1="10" i2="X" l="FRE"><s0>Couche mince</s0><s5>10</s5></fC03><fC03 i1="10" i2="X" l="ENG"><s0>Thin film</s0><s5>10</s5></fC03><fC03 i1="10" i2="X" l="SPA"><s0>Capa fina</s0><s5>10</s5></fC03><fC03 i1="11" i2="3" l="FRE"><s0>Cuivre séléniure</s0><s2>NK</s2><s5>29</s5></fC03><fC03 i1="11" i2="3" l="ENG"><s0>Copper selenides</s0><s2>NK</s2><s5>29</s5></fC03><fC03 i1="12" i2="3" l="FRE"><s0>Indium séléniure</s0><s2>NK</s2><s5>30</s5></fC03><fC03 i1="12" i2="3" l="ENG"><s0>Indium selenides</s0><s2>NK</s2><s5>30</s5></fC03><fC03 i1="13" i2="3" l="FRE"><s0>Gallium séléniure</s0><s2>NK</s2><s5>31</s5></fC03><fC03 i1="13" i2="3" l="ENG"><s0>Gallium selenides</s0><s2>NK</s2><s5>31</s5></fC03><fC03 i1="14" i2="X" l="FRE"><s0>8460J</s0><s4>INC</s4><s5>51</s5></fC03><fC03 i1="15" i2="X" l="FRE"><s0>Cu(In1-xGax)Se2</s0><s4>INC</s4><s5>52</s5></fC03><fN21><s1>022</s1></fN21></pA><pR><fA30 i1="01" i2="1" l="ENG"><s1>Symposium F on Thin Film and Nanostructured Materials for Photovoltaics, EMRS 2005 Conference</s1><s3>Strasbourg FRA</s3><s4>2005-05-31</s4></fA30></pR></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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